Nexperia Type N-Channel MOSFET, 7.9 A, 30 V Enhancement, 8-Pin MLPAK33 PXN017-30QLJ

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Subtotal (1 pack of 25 units)*

Kr.62 45 

(exc. VAT)

Kr.78 05 

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 25Kr. 2,498Kr. 62,45
50 - 75Kr. 2,453Kr. 61,33
100 - 225Kr. 1,867Kr. 46,68
250 - 975Kr. 1,83Kr. 45,75
1000 +Kr. 1,144Kr. 28,60

*price indicative

Packaging Options:
RS Stock No.:
240-1983
Mfr. Part No.:
PXN017-30QLJ
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7.9A

Maximum Drain Source Voltage Vds

30V

Package Type

MLPAK33

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

12.5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Nexperia N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible

Trench MOSFET technology

Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies

Superfast switching with soft-recovery

Low spiking and ringing for low EMI designs

MLPAK33 package (3.3 x 3.3 mm footprint)

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