Infineon IPL Type N-Channel MOSFET, 4.5 A, 800 V, 5-Pin ThinPAK 5x6 IPLK80R1K2P7ATMA1
- RS Stock No.:
- 240-8548
- Distrelec Article No.:
- 304-24-006
- Mfr. Part No.:
- IPLK80R1K2P7ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.61 04
(exc. VAT)
Kr.76 30
(inc. VAT)
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- 4 990 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 12,208 | Kr. 61,04 |
| 50 - 120 | Kr. 11,006 | Kr. 55,03 |
| 125 - 245 | Kr. 10,274 | Kr. 51,37 |
| 250 - 495 | Kr. 9,518 | Kr. 47,59 |
| 500 + | Kr. 8,90 | Kr. 44,50 |
*price indicative
- RS Stock No.:
- 240-8548
- Distrelec Article No.:
- 304-24-006
- Mfr. Part No.:
- IPLK80R1K2P7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | IPL | |
| Package Type | ThinPAK 5x6 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 43W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 3 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.42mm | |
| Automotive Standard | AEC-Q101 | |
| Distrelec Product Id | 30424006 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series IPL | ||
Package Type ThinPAK 5x6 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 43W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 3 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.42mm | ||
Automotive Standard AEC-Q101 | ||
Distrelec Product Id 30424006 | ||
The Infineon 800V CoolMOS™ P7 super junction MOSFET series is a perfect fit for low-power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, audio SMPS, AUX and industrial power. It offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in class FOM RDS(on)*Eoss; reduced Qg, Ciss, and Coss
Best-in-class DPAK RDS(on)
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
Integrated Zener Diode ESD protection
Fully optimized portfolio
Low EMI
The ThinPAK 5x6 package is characterized by a very small footprint of 5x6 mm² and a very low profile with a height of 1 mm and together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. This combination makes CoolMOS™ P7 in ThinPAK 5x6 a perfect fit for its target applications.
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