Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TDSON IAUC120N04S6L012ATMA1
- RS Stock No.:
- 241-9890
- Mfr. Part No.:
- IAUC120N04S6L012ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.24 60
(exc. VAT)
Kr.30 76
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 14 988 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 12,30 | Kr. 24,60 |
| 20 - 48 | Kr. 10,18 | Kr. 20,36 |
| 50 - 98 | Kr. 9,55 | Kr. 19,10 |
| 100 - 198 | Kr. 8,925 | Kr. 17,85 |
| 200 + | Kr. 8,235 | Kr. 16,47 |
*price indicative
- RS Stock No.:
- 241-9890
- Mfr. Part No.:
- IAUC120N04S6L012ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS 6 Power-Transistor is a N channel power MOSFET for automotive applications. It is 100% Avalanche tested.
AEC Q101 qualified
MSL1 up to 260°C peak reflow
Green Product (RoHS compliant)
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