Infineon IPT Type N-Channel MOSFET, 400 A, 800 V, 8-Pin TO-263 IPT020N10N5ATMA1
- RS Stock No.:
- 244-0904
- Mfr. Part No.:
- IPT020N10N5ATMA1
- Brand:
- Infineon
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Subtotal (1 unit)*
Kr.51 02
(exc. VAT)
Kr.63 78
(inc. VAT)
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In Stock
- 1 780 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 51,02 |
| 10 - 24 | Kr. 48,51 |
| 25 - 49 | Kr. 47,48 |
| 50 - 99 | Kr. 44,39 |
| 100 + | Kr. 41,30 |
*price indicative
- RS Stock No.:
- 244-0904
- Mfr. Part No.:
- IPT020N10N5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 400A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 400A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Industrial power MOSFET IPT020N10N5 in TO-Leadless from Infineon is the ideal choice for high switching frequencies.
Ideal for high frequency switching and syncrec
Excellent gate charge x RDS(on)product(FOM)
Very low on-resistance RDS(on)
Very low on-resistance RDS(on)
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