Infineon IPD Type N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.26 135 00 

(exc. VAT)

Kr.32 670 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 10,454Kr. 26 135,00

*price indicative

RS Stock No.:
244-0943
Mfr. Part No.:
IPD65R225C7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

N

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon's CoolMOS C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

650V voltage

Revolutionary Best-in-Class RDS (on)/package

Reduced energy stored in output capacitance (Eoss)

Lower gate charge Qg

Space saving through use of smaller packages or reduction of parts

Improved safety margin and suitable for both SMPS and Solar Inverter applications

Lowest conduction losses/package

Low switching losses

Better light load efficiency

Increasing power density

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