DiodesZetex 2 Type N-Channel MOSFET, 20 V Enhancement, 6-Pin SOT-363 DMN2710UDW-7

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Subtotal (1 pack of 25 units)*

Kr.50 80 

(exc. VAT)

Kr.63 50 

(inc. VAT)

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25 - 25Kr. 2,032Kr. 50,80
50 - 75Kr. 1,995Kr. 49,88
100 - 225Kr. 1,464Kr. 36,60
250 - 975Kr. 1,437Kr. 35,93
1000 +Kr. 1,40Kr. 35,00

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Packaging Options:
RS Stock No.:
246-7513
Mfr. Part No.:
DMN2710UDW-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.75Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

6 V

Typical Gate Charge Qg @ Vgs

0.6nC

Maximum Power Dissipation Pd

0.36W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT363 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.

Maximum drain to source voltage is 20 V and Maximum gate to source voltage is ±6 V It offers a ultra-small package size It has low input/output leakage

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