DiodesZetex N-Channel MOSFET, 40 A, 60 V Enhancement, 8-Pin PowerDI5060-8 DMT6011LPDW-13

Bulk discount available
View bulk pricing options

Subtotal (1 pack of 25 units)*

Kr. 198,55

(exc. VAT)

Kr. 248,20

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Pack*
25 - 25Kr. 7,942Kr. 198,55
50 - 75Kr. 7,788Kr. 194,70
100 - 225Kr. 5,601Kr. 140,03
250 +Kr. 5,464Kr. 136,60

*price indicative

Packaging Options:
RS Stock No.:
246-7555
Mfr. Part No.:
DMT6011LPDW-13
Brand:
DiodesZetex
Find similar products by selecting one or more attributes.
Select all

Brand

DiodesZetex

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerDI5060-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.022Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

22.2nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI5060-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.

Maximum drain to source voltage is 20 V and maximum gate to source voltage is ±12 V It offers low on-resistance It has low gate threshold voltage It offers an ESD protected gate

Related links