ROHM RCJ451N20 Type N-Channel MOSFET, 10.7 A, 200 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

Kr.22 624 00 

(exc. VAT)

Kr.28 280 00 

(inc. VAT)

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1000 +Kr. 22,624Kr. 22 624,00

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RS Stock No.:
249-1132
Mfr. Part No.:
RCJ451N20TL
Brand:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.7A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

RCJ451N20

Pin Count

3

Maximum Drain Source Resistance Rds

2.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 200 V drain-source voltage and 45 A drain current, taping packing type.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHs compliant

100 percent avalanche tested

Drive circuits can be simple

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