Infineon Half and Full Bridge (2X) Configuration BTN99x0LV 2 Type P, Type N-Channel MOSFET, 115 A, 40 V Dual, 7-Pin PG

RS Stock No.:: 249-3347
Mfr. Part No.:: BTN9990LVAUMA1
Brand:: Infineon

Infineon Half and Full Bridge (2X) Configuration BTN99x0LV 2 Type P, Type N-Channel MOSFET, 115 A, 40 V Dual, 7-Pin PG

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Kr. 56,40

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Kr. 70,50

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1 - 9	Kr. 56,40
10 - 24	Kr. 53,54
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100 +	Kr. 45,76

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RS Stock No.:: 249-3347
Mfr. Part No.:: BTN9990LVAUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	115A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PG HSOF-7
	Series	BTN99x0LV
	Mount Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance Rds	9.6mΩ
	Channel Mode	Dual
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	20V
	Transistor Configuration	Half and Full Bridge (2X) Configuration
	Maximum Operating Temperature	150°C
	Standards/Approvals	AEC-Q100/Q006 (Grade 1)
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q006, AEC-Q100

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 115A
	Maximum Drain Source Voltage Vds 40V
	Package Type PG HSOF-7
	Series BTN99x0LV
	Mount Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance Rds 9.6mΩ
	Channel Mode Dual
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 20V
	Transistor Configuration Half and Full Bridge (2X) Configuration
	Maximum Operating Temperature 150°C
	Standards/Approvals AEC-Q100/Q006 (Grade 1)
	Number of Elements per Chip 2
	Automotive Standard AEC-Q006, AEC-Q100

Datasheet - BTN9990LVAUMA1

Infineon BTN99x0LV Series MOSFET, 40V Maximum Drain Source Voltage, 115A Maximum Continuous Drain Current - BTN9990LVAUMA1

This MOSFET is a dual-channel transistor designed for switching and bridge configurations in automotive environments. It supports both half-bridge and full-bridge arrangements and is supplied in a PG HSOF-7 package suitable for modules requiring compact, dual-element power devices. The device is rated for operation across an extended temperature range and conforms to automotive-grade standards for use in vehicle systems.

Features and Benefits:

• 40V maximum drain voltage for common automotive system voltages
• 115A continuous drain current for high-current switching
• 9.6mΩ Rds(on) for reduced conduction losses
• ±20V gate tolerance to protect gate circuitry
• Dual N and P channel arrangement enabling complementary stages
• 150°C maximum operating temperature for thermal headroom

Applications

• Suitable for half and full bridge power stages in vehicles
• Ideal for DC motor drive inverter stages in automotive systems
• Used with complementary P and N channel configurations in H-bridges
• Can be used for high-current switching in battery management
• Used for power stages requiring automotive-grade components

What temperature extremes can this device tolerate in operation?

It can operate down to -40°C and up to 150°C.

How many transistor elements are present on each chip?

Each chip contains two elements arranged as a dual-channel device.

What package does it use for board mounting and thermal conduction?

The component is supplied in a PG HSOF-7 package.

Which automotive qualification levels does it satisfy?

It meets AEC-Q100 and AEC-Q006 automotive-grade approvals.

What channel types are integrated for complementary switching topologies?

The device includes both N-channel and P-channel types.