STMicroelectronics A2F SiC Power Module, 75 A, 1200 V Enhancement ACEPACK 2 A2F12M12W2-F1

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Subtotal (1 unit)*

Kr.2 672 96 

(exc. VAT)

Kr.3 341 20 

(inc. VAT)

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1 - 1Kr. 2 672,96
2 +Kr. 2 606,15

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Packaging Options:
RS Stock No.:
249-6718
Mfr. Part No.:
A2F12M12W2-F1
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

SiC Power Module

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

1200V

Package Type

ACEPACK 2

Series

A2F

Mount Type

Chassis

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

18 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Standards/Approvals

UL

Automotive Standard

AEC-Q101

The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.

Four pack topology

ACEPACK 2 power module

13 mΩ of typical RDS(on) each switch

Insulation voltage UL certified of 2.5 kVrms

Integrated NTC temperature sensor

DBC Cu-Al2O3-Cu based

Press fit contact pins

Excellent switching performance that is virtually independent of temperature

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