Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6

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Subtotal (1 pack of 2 units)*

Kr.31 57 

(exc. VAT)

Kr.39 462 

(inc. VAT)

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2 - 18Kr. 15,785Kr. 31,57
20 - 48Kr. 13,27Kr. 26,54
50 - 98Kr. 12,355Kr. 24,71
100 - 198Kr. 11,555Kr. 23,11
200 +Kr. 10,64Kr. 21,28

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Packaging Options:
RS Stock No.:
249-6892
Mfr. Part No.:
IAUC60N04S6N031HATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Package Type

SuperSO8 5 x 6

Series

OptiMOS-TM6

Pin Count

8

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

75W

Forward Voltage Vf

1.1V

Transistor Configuration

Half Bridge

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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