Infineon IAUC Type N-Channel MOSFET, 80 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC80N04S6L032ATMA1
- RS Stock No.:
- 249-6896
- Mfr. Part No.:
- IAUC80N04S6L032ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.67 04
(exc. VAT)
Kr.83 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 4 660 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 13,408 | Kr. 67,04 |
| 50 - 120 | Kr. 12,034 | Kr. 60,17 |
| 125 - 245 | Kr. 11,256 | Kr. 56,28 |
| 250 - 495 | Kr. 10,434 | Kr. 52,17 |
| 500 + | Kr. 9,77 | Kr. 48,85 |
*price indicative
- RS Stock No.:
- 249-6896
- Mfr. Part No.:
- IAUC80N04S6L032ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | IAUC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series IAUC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
Related links
- Infineon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IAUC80N04S6L032ATMA1
- Infineon N-Channel MOSFET Transistor 30 V, 8-Pin SuperSO8 5 x 6 BSC0901NSIATMA1
- Infineon N-Channel MOSFET Transistor 80 V, 8-Pin SuperSO8 5 x 6 IAUZ20N08S5L300ATMA1
- Infineon N-Channel MOSFET Transistor 20 V, 8-Pin SuperSO8 5 x 6 IAUC80N04S6N036ATMA1
- Infineon N-Channel MOSFET Transistor 25 V, 8-Pin SuperSO8 5 x 6 BSZ031NE2LS5ATMA1
- Infineon N-Channel MOSFET Transistor 80 V, 8-Pin SuperSO8 5 x 6 BSZ075N08NS5ATMA1
- Infineon N-Channel MOSFET 80 V, 8-Pin SuperSO8 5 x 6 BSC037N08NS5TATMA1
- Infineon N-Channel MOSFET 150 V, 8-Pin SuperSO8 5 x 6 BSC074N15NS5ATMA1