Infineon BSR Type N-Channel MOSFET, 3.7 A, 40 V Enhancement, 3-Pin SOT-223

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 3000 units)*

Kr. 4 758,00

(exc. VAT)

Kr. 5 946,00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 22. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 - 3000Kr. 1,586Kr. 4 758,00
6000 - 6000Kr. 1,545Kr. 4 635,00
9000 +Kr. 1,507Kr. 4 521,00

*price indicative

RS Stock No.:
250-0539
Mfr. Part No.:
BSR802NL6327HTSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.7A

Maximum Drain Source Voltage Vds

40V

Series

BSR

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon makes this Optimos 2 Small-Signal-Transistor. It is a P-channel, Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.

Logic level (4.5V rated)

Avalanche rated and 100% lead-free

Maximum power dissipation is 360 mW

Related links

Recently viewed