Infineon BSS Type P-Channel MOSFET, 0.9 A, 100 V Depletion, 3-Pin SOT-23 BSS169H6327XTSA1

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Subtotal (1 pack of 10 units)*

Kr.33 40 

(exc. VAT)

Kr.41 80 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90Kr. 3,34Kr. 33,40
100 - 240Kr. 3,169Kr. 31,69
250 - 490Kr. 3,10Kr. 31,00
500 - 990Kr. 2,894Kr. 28,94
1000 +Kr. 2,334Kr. 23,34

*price indicative

Packaging Options:
RS Stock No.:
250-0551
Mfr. Part No.:
BSS169H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.9A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-23

Series

BSS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Distrelec Product Id

304-40-500

The Infineon makes N-channel Depletion mode small signal MOSFET transistor widely used in high-switching applications. It is avalanche rated and halogen-free. It is a SIPMOS Small-Signal-Transistor, dv /dt rated and available with V GS(th) indicator on reel.

VDS is 100 V, Rds(on),max 12 W and IDSS,min is 0.09 A

Maximum power dissipation is 360mW

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