Vishay Type N-Channel MOSFET, 430 A, 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184E-T1_GE3

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Subtotal (1 pack of 2 units)*

Kr.88 20 

(exc. VAT)

Kr.110 24 

(inc. VAT)

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Being discontinued
  • Final 694 unit(s), ready to ship
Units
Per unit
Per Pack*
2 - 18Kr. 44,10Kr. 88,20
20 - 48Kr. 41,525Kr. 83,05
50 - 98Kr. 37,465Kr. 74,93
100 - 198Kr. 35,29Kr. 70,58
200 +Kr. 33,175Kr. 66,35

*price indicative

Packaging Options:
RS Stock No.:
252-0312
Mfr. Part No.:
SQJQ184E-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

430A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK (8x8LR)

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0014mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

214W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

43nC

Maximum Operating Temperature

175°C

Width

4.9 mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Thin 1.9 mm height


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