DiodesZetex N-Channel MOSFET, 400 mA, 30 V X2-DFN0806-6 DMN31D5UDAQ-7B
- RS Stock No.:
- 254-8612
- Mfr. Part No.:
- DMN31D5UDAQ-7B
- Brand:
- DiodesZetex
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
Kr. 51,50
(exc. VAT)
Kr. 64,50
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 3 925 unit(s) shipping from 19 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 475 | Kr. 2,06 | Kr. 51,50 |
| 500 - 975 | Kr. 0,755 | Kr. 18,88 |
| 1000 - 2475 | Kr. 0,535 | Kr. 13,38 |
| 2500 - 4975 | Kr. 0,522 | Kr. 13,05 |
| 5000 + | Kr. 0,512 | Kr. 12,80 |
*price indicative
- RS Stock No.:
- 254-8612
- Mfr. Part No.:
- DMN31D5UDAQ-7B
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | X2-DFN0806-6 | |
| Mount Type | Surface | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.38nC | |
| Maximum Power Dissipation Pd | 0.37W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type X2-DFN0806-6 | ||
Mount Type Surface | ||
Maximum Gate Source Voltage Vgs 12V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.38nC | ||
Maximum Power Dissipation Pd 0.37W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodeZetex enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose interfacing sw
Low on resistance
Very low gate threshold voltage
ESD protected gate
Halogen and antimony Free
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