Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PowerDI3333-8
	Pin Count	8
	Maximum Drain Source Resistance Rds	41mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	1.73W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Width	3.3 mm
	Length	3.3mm
	Height	0.8mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand DiodesZetex
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 100V
	Package Type PowerDI3333-8
	Pin Count 8
	Maximum Drain Source Resistance Rds 41mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 1.73W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Width 3.3 mm
	Length 3.3mm
	Height 0.8mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - DMTH10H032LFVWQ-7

The DiodeZetex enhancement mode MOSFET has been designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in backlighting, dc to dc converters and power management functi

Low on resistance

Wet table flank for improved optical inspection

Low switching losses

Halogen and antimony free

DiodesZetex Type N-Channel MOSFET, 26 A, 100 V Enhancement, 8-Pin PowerDI3333-8

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