Infineon HEXFET Type N-Channel MOSFET, 10 A, 80 V, 8-Pin SO-8 IRF7854TRPBF

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Subtotal (1 pack of 5 units)*

Kr.49 31 

(exc. VAT)

Kr.61 64 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 9,862Kr. 49,31
50 - 120Kr. 8,192Kr. 40,96
125 - 245Kr. 7,688Kr. 38,44
250 - 495Kr. 7,092Kr. 35,46
500 +Kr. 5,446Kr. 27,23

*price indicative

Packaging Options:
RS Stock No.:
257-9322
Mfr. Part No.:
IRF7854TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.4mΩ

Typical Gate Charge Qg @ Vgs

27nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon IRF series is the 80V n channel strong IRFET power mosfet in a SO 8 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below 100 kHz


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