Infineon HEXFET N-Channel MOSFET, 35 A, 150 V Enhancement TO-220 IRFB5615PBF

This MOSFET is a through-hole power transistor designed for switching and power conversion in demanding environments. It operates as an enhancement-mode N-channel device in a TO-220 package, suitable for installations requiring a robust drain-source voltage rating and substantial continuous current handling. The component meets RoHS requirements and is rated for a wide thermal span suited to industrial conditions.

• 150V drain-source rating enables high-voltage switching applications
• 35A continuous current supports high-current power supplies
• 39mΩ low Rds(on) minimises conduction losses during operation
• -55°C to +175°C operating range permits use across extreme temperatures
• 1.3V forward gate voltage reduces drive requirements for switching

• Suitable for motor-drive power stages
• Ideal for high-current switch-mode power supplies
• Used with discrete power-control modules in industrial systems
• Can be used for high-voltage DC switching tasks

It is supplied in a TO-220 through-hole package suitable for secure soldered mounting.

The N-channel configuration requires positive gate drive relative to source for conduction.

It is not specified to conform to automotive-grade standards.

The device complies with RoHS directives limiting certain hazardous substances.