Infineon OptiMOS N-Channel MOSFET, 161 A, 40 V N, 8-Pin TDSON BSC019N04LSATMA1

RS Stock No.:: 258-0683
Mfr. Part No.:: BSC019N04LSATMA1
Brand:: Infineon

Infineon OptiMOS N-Channel MOSFET, 161 A, 40 V N, 8-Pin TDSON BSC019N04LSATMA1

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Subtotal (1 pack of 2 units)*

Kr. 36,26

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Kr. 45,32

(inc. VAT)

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Units	Per unit	Per Pack*
2 - 18	Kr. 18,13	Kr. 36,26
20 - 48	Kr. 16,19	Kr. 32,38
50 - 98	Kr. 15,445	Kr. 30,89
100 - 198	Kr. 14,185	Kr. 28,37
200 +	Kr. 13,33	Kr. 26,66

*price indicative

RS Stock No.:: 258-0683
Mfr. Part No.:: BSC019N04LSATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	161A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.20mΩ
	Channel Mode	N
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	78W
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	+175°C
	Standards/Approvals	RoHS, IEC 61249-2-21
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 161A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.20mΩ
	Channel Mode N
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 78W
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature +175°C
	Standards/Approvals RoHS, IEC 61249-2-21
	Automotive Standard No

Datasheet - BSC019N04LSATMA1

Infineon OptiMOS Series MOSFET, 40V Maximum Drain-Source Voltage, 161A Maximum Continuous Drain Current - BSC019N04LSATMA1

This MOSFET is a surface-mount N‑channel power transistor designed for high-current switching in Compact assemblies. It operates across a wide ambient range and is suited to thermally stressed environments. The device offers low conduction losses and is supplied in an eight-pin TDSON package for dense board layouts.

Features and Benefits:

• 1.20mΩ Rds(on) reduces conduction losses for efficiency
• 78W power dissipation supports sustained high-power operation
• 21 nC gate charge enables controlled switching transitions
• ±20V gate rating tolerates robust drive voltages
• -55°C to +175°C range allows extreme temperature endurance

Applications

• Suitable for high-current DC-DC conversion stages
• Ideal for synchronous rectification in power supplies
• Used with MOSFET drivers in motor-control inverters
• Can be used for server and telecoms power distribution
• Suitable for Compact surface-mount power modules

What package type facilitates Compact board layouts?

It is supplied in an eight-pin TDSON surface-mount package that saves board area and eases thermal interfacing.

How does the device handle high continuous currents?

The transistor supports a continuous drain current of 161A, enabling sustained high-current switching when mounted with appropriate thermal management.

What standards and material restrictions apply to the component?

The device meets RoHS requirements and follows IEC 61249-2-21 material specifications.

What is the maximum volt capability between drain and source?

The maximum permissible drain-source voltage is 40V, defining its safe operating voltage boundary.

What channel configuration does the transistor use?

It uses an N‑channel configuration suited to low-side or synchronous switching topologies.