Infineon BSZ Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin TSDSON
- RS Stock No.:
- 258-0715
- Mfr. Part No.:
- BSZ084N08NS5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
Kr.25 370 00
(exc. VAT)
Kr.31 710 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 25. mai 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | Kr. 5,074 | Kr. 25 370,00 |
*price indicative
- RS Stock No.:
- 258-0715
- Mfr. Part No.:
- BSZ084N08NS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TSDSON | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.4mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.86V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TSDSON | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.4mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.86V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
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