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Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263

RS Stock No.:: 258-3819
Mfr. Part No.:: IPB80P04P4L06ATMA2
Brand:: Infineon

Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263

Currently unavailable

We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 258-3819
Mfr. Part No.:: IPB80P04P4L06ATMA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	40V
	Series	iPB
	Package Type	TO-263
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	40.7mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 40V
	Series iPB
	Package Type TO-263
	Mount Type Surface
	Maximum Drain Source Resistance Rds 40.7mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IPB80P04P4L06ATMA2

The Infineon OptiMOS-P2 power-transistor is P-channel logic level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263

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