Infineon iPB Type N-Channel MOSFET, 211 A, 650 V N TO-263 IPBE65R050CFD7AATMA1

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Subtotal (1 unit)*

Kr.90 49 

(exc. VAT)

Kr.113 11 

(inc. VAT)

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1 - 9Kr. 90,49
10 - 24Kr. 86,03
25 - 49Kr. 82,25
50 - 99Kr. 78,71
100 +Kr. 73,33

*price indicative

Packaging Options:
RS Stock No.:
258-3827
Mfr. Part No.:
IPBE65R050CFD7AATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

211A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.

Best-in-class quality and reliability

Higher breakdown voltage

High peak current capability

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