Infineon IPT N-Channel MOSFET, 315 A, 100 V Enhancement HSOF IPT015N10NF2SATMA1
- RS Stock No.:
- 259-2647
- Mfr. Part No.:
- IPT015N10NF2SATMA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 61,55
(exc. VAT)
Kr. 76,94
(inc. VAT)
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In Stock
- 1 226 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 61,55 |
| 10 - 24 | Kr. 55,14 |
| 25 - 49 | Kr. 51,59 |
| 50 - 99 | Kr. 48,51 |
| 100 + | Kr. 44,84 |
*price indicative
- RS Stock No.:
- 259-2647
- Mfr. Part No.:
- IPT015N10NF2SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 315A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSOF | |
| Series | IPT | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 1.50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 315A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSOF | ||
Series IPT | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 1.50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon StrongIRFET 2 power MOSFETs are optimized for a broad range of applications like SMPS, motor drive, battery powered, battery management, UPS, and light electric vehicles. This new technology offers up to 40 percent RDS(on) improvement and up to 60 percent lower Qg compared to the previous StrongIRFET devices, translating into higher power efficiency for improved overall system performance. Increased current ratings allow for higher current carrying capability, eliminating the need to parallel multiple devices translating to lower BOM costs and board savings.
Broad availability from distribution partners
Excellent price/performance ratio
Ideal for high and low switching frequencies
Industry standard footprint through-hole package
High current rating
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