Infineon IPT N-Channel MOSFET, 143 A, 150 V, 8-Pin HSOG IPTG054N15NM5ATMA1

RS Stock No.:: 259-2738
Mfr. Part No.:: IPTG054N15NM5ATMA1
Brand:: Infineon

Infineon IPT N-Channel MOSFET, 143 A, 150 V, 8-Pin HSOG IPTG054N15NM5ATMA1

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Subtotal (1 unit)*

Kr. 72,19

(exc. VAT)

Kr. 90,24

(inc. VAT)

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Units	Per unit
1 - 9	Kr. 72,19
10 - 24	Kr. 68,64
25 - 49	Kr. 67,15
50 - 99	Kr. 62,69
100 +	Kr. 57,77

*price indicative

RS Stock No.:: 259-2738
Mfr. Part No.:: IPTG054N15NM5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	143A
	Maximum Drain Source Voltage Vds	150V
	Series	IPT
	Package Type	HSOG
	Mount Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance Rds	55.4mΩ
	Maximum Power Dissipation Pd	250W
	Forward Voltage Vf	830mV
	Typical Gate Charge Qg @ Vgs	58nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Width	8.75mm
	Standards/Approvals	RoHS, IEC 61249-2-21
	Length	10.1mm
	Height	2.4mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 143A
	Maximum Drain Source Voltage Vds 150V
	Series IPT
	Package Type HSOG
	Mount Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance Rds 55.4mΩ
	Maximum Power Dissipation Pd 250W
	Forward Voltage Vf 830mV
	Typical Gate Charge Qg @ Vgs 58nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Width 8.75mm
	Standards/Approvals RoHS, IEC 61249-2-21
	Length 10.1mm
	Height 2.4mm
	Automotive Standard No

Datasheet - IPTG054N15NM5ATMA1

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

Infineon IPT N-Channel MOSFET, 143 A, 150 V, 8-Pin HSOG IPTG054N15NM5ATMA1

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