Infineon IQE Type N-Channel MOSFET, 205 A, 40 V Enhancement, 9-Pin WHTFN IQE013N04LM6CGSCATMA1

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Subtotal (1 pack of 2 units)*

Kr.67 87 

(exc. VAT)

Kr.84 838 

(inc. VAT)

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  • 11 830 unit(s) ready to ship
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Units
Per unit
Per Pack*
2 - 18Kr. 33,935Kr. 67,87
20 - 48Kr. 30,49Kr. 60,98
50 - 98Kr. 28,545Kr. 57,09
100 - 198Kr. 26,425Kr. 52,85
200 +Kr. 24,77Kr. 49,54

*price indicative

Packaging Options:
RS Stock No.:
260-1077
Mfr. Part No.:
IQE013N04LM6CGSCATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

205A

Maximum Drain Source Voltage Vds

40V

Series

IQE

Package Type

WHTFN

Mount Type

Surface

Pin Count

9

Channel Mode

Enhancement

Forward Voltage Vf

1V

Standards/Approvals

No

Automotive Standard

No

The Infineon MOSFETs allows the source potential to be connected to the PCB over the thermal pad which offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. It also have the reduced active cooling requirements and the effective layout for thermal management which are benefits at the system level.

Enabling highest power density and performance

Superior thermal performance

Optimized layout possibilities

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