Infineon IPD Type N-Channel MOSFET, 375 A, 600 V N HDSOP IPDQ60R022S7XTMA1

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Subtotal (1 unit)*

Kr.150 71 

(exc. VAT)

Kr.188 39 

(inc. VAT)

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Units
Per unit
1 - 4Kr. 150,71
5 - 9Kr. 138,65
10 - 24Kr. 129,73
25 - 49Kr. 120,58
50 +Kr. 111,54

*price indicative

Packaging Options:
RS Stock No.:
260-1200
Mfr. Part No.:
IPDQ60R022S7XTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

375A

Maximum Drain Source Voltage Vds

600V

Series

IPD

Package Type

HDSOP

Mount Type

Surface

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

416W

Forward Voltage Vf

0.82V

Typical Gate Charge Qg @ Vgs

150nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.

High pulse current capability

Increased system performance

More compact and easier design

Lower BOM or/and TCO over prolonged life time

Shock & vibration resistance

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