STMicroelectronics Dual N-Channel MOSFET, 95 V, 5-Pin LBB RF5L15120CB4
- RS Stock No.:
- 261-5584
- Mfr. Part No.:
- RF5L15120CB4
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 2 025,11
(exc. VAT)
Kr. 2 531,39
(inc. VAT)
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In Stock
- Plus 20 unit(s) shipping from 21 September 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 2 025,11 |
| 10 - 99 | Kr. 1 989,64 |
| 100 + | Kr. 1 965,28 |
*price indicative
- RS Stock No.:
- 261-5584
- Mfr. Part No.:
- RF5L15120CB4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Dual N | |
| Maximum Drain Source Voltage Vds | 95V | |
| Package Type | LBB | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 28.95mm | |
| Width | 5.85mm | |
| Standards/Approvals | 2002/95/EC | |
| Height | 2.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Dual N | ||
Maximum Drain Source Voltage Vds 95V | ||
Package Type LBB | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Maximum Gate Source Voltage Vgs 10V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 28.95mm | ||
Width 5.85mm | ||
Standards/Approvals 2002/95/EC | ||
Height 2.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.
High efficiency and linear gain operations
Integrated ESD protection
Large positive and negative gate or source voltage range
Excellent thermal stability, low HCI drift
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