Infineon HEXFET Type N-Channel MOSFET, 63 A, 100 V Enhancement, 3-Pin IPAK

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Subtotal (1 tube of 3000 units)*

Kr.19 734 00 

(exc. VAT)

Kr.24 666 00 

(inc. VAT)

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Units
Per unit
Per Tube*
3000 +Kr. 6,578Kr. 19 734,00

*price indicative

RS Stock No.:
262-6778
Mfr. Part No.:
IRFU4510PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

100V

Package Type

IPAK

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

13.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

54nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

143W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

6.22 mm

Length

6.73mm

Height

2.39mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET provides benefits such as improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.

Enhanced body diode dV/dt and dI/dt capability

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