Microchip TN0606 Type N-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin TO-92

View all MOSFETs

Subtotal (1 bag of 1000 units)*

Kr.8 031 00 

(exc. VAT)

Kr.10 039 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 23. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Bag*
1000 +Kr. 8,031Kr. 8 031,00

*price indicative

RS Stock No.:
264-8909
Mfr. Part No.:
TN0606N3-G
Brand:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-92

Series

TN0606

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

2V maximum low threshold

High input impedance

100pF typical low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Related links