Microchip Type N-Channel MOSFET, 250 mA, 300 V MOSFET, 3-Pin SOT-23 TN2130K1-G

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

Kr.92 65 

(exc. VAT)

Kr.115 80 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 1 975 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 25Kr. 3,706Kr. 92,65
50 - 75Kr. 3,606Kr. 90,15
100 - 225Kr. 3,519Kr. 87,98
250 - 975Kr. 3,423Kr. 85,58
1000 +Kr. 3,34Kr. 83,50

*price indicative

Packaging Options:
RS Stock No.:
264-8917
Mfr. Part No.:
TN2130K1-G
Brand:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

250mA

Maximum Drain Source Voltage Vds

300V

Package Type

SOT-23

Mount Type

Through Hole

Pin Count

3

Channel Mode

MOSFET

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

0.36W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Related links