Vishay SiRA Type N-Channel MOSFET, 128 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SiRA54ADP-T1-RE3

Subtotal (1 reel of 3000 units)*

Kr.17 562 00 

(exc. VAT)

Kr.21 954 00 

(inc. VAT)

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Per Reel*
3000 +Kr. 5,854Kr. 17 562,00

*price indicative

RS Stock No.:
268-8336
Mfr. Part No.:
SiRA54ADP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

128A

Maximum Drain Source Voltage Vds

40V

Series

SiRA

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0022Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

7nC

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It is single configuration device and It is used an application as synchronous rectification and motor drive control.

ROHS compliant

UIS tested 100 percent

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