Infineon BSC N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC0902NSATMA1

RS Stock No.:: 273-2631
Mfr. Part No.:: BSC0902NSATMA1
Brand:: Infineon

Infineon BSC N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC0902NSATMA1

Subtotal (1 reel of 5000 units)*

Kr. 17 730,00

(exc. VAT)

Kr. 22 160,00

(inc. VAT)

FREE delivery for online orders over 750,00 kr

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Shipping from 08 March 2027

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Units	Per unit	Per Reel*
5000 +	Kr. 3,546	Kr. 17 730,00

*price indicative

RS Stock No.:: 273-2631
Mfr. Part No.:: BSC0902NSATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	30V
	Series	BSC
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.6mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	17nC
	Maximum Gate Source Voltage Vgs	4.5V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+150°C
	Height	350μm
	Width	5.35mm
	Standards/Approvals	RoHS
	Length	6.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 30V
	Series BSC
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.6mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 17nC
	Maximum Gate Source Voltage Vgs 4.5V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +150°C
	Height 350μm
	Width 5.35mm
	Standards/Approvals RoHS
	Length 6.1mm
	Automotive Standard No

Datasheet - BSC0902NSATMA1

Infineon BSC Series MOSFET, 30V Maximum Drain-Source Voltage, 100A Maximum Continuous Drain Current - BSC0902NSATMA1

This MOSFET is an N-channel enhancement-mode transistor supplied in an 8-pin TDSON package for surface mounting. It is designed to switch and control high currents at low voltages while operating across a wide ambient range. The device is suitable for applications requiring logic-level gate drive and a Compact board footprint, and it conforms to RoHS environmental standards.

Features and Benefits:

• 2.6mΩ Rds(on) reduces conduction losses during high-current operation
• 4.5V maximum gate drive enables low-voltage logic-level switching
• 100A continuous drain capacity supports heavy current loads
• -55°C to +150°C operating range sustains performance in harsh temperatures
• TDSON surface package allows Compact board-level power density

Applications

• Suitable for DC power distribution in low-voltage systems
• Ideal for motor drivers requiring high-current switching
• Used with battery management circuits in Compact assemblies
• Can be used for synchronous rectification in power converters
• Useful in board-level high-current load switching modules

What gate voltage range should be observed for reliable operation?

Gate drive should not exceed the specified 4.5V maximum to avoid gate stress.

How does the package affect thermal management on the PCB?

The TDSON 8-pin surface package provides a Compact thermal path requiring an appropriate copper area for heat dissipation.

Is this device suitable for automotive qualification workflows?

The device is not specified as meeting automotive standards despite its wide temperature capability.

What channel conduction mode does the device use?

It operates in enhancement mode as an N-channel transistor.

What environmental compliance does it meet?

It is compliant with RoHS restrictions on hazardous substances.