Infineon OptiMOS Type N-Channel MOSFET, 57 A, 650 V Enhancement, 10-Pin PG-HDSOP-10-1 IPDD60R050G7XTMA1

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Subtotal (1 reel of 1700 units)*

Kr.92 481 70 

(exc. VAT)

Kr.115 601 70 

(inc. VAT)

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Units
Per unit
Per Reel*
1700 +Kr. 54,401Kr. 92 481,70

*price indicative

RS Stock No.:
273-2787
Mfr. Part No.:
IPDD60R050G7XTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

57A

Maximum Drain Source Voltage Vds

650V

Series

OptiMOS

Package Type

PG-HDSOP-10-1

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

50mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

68nC

Maximum Power Dissipation Pd

278W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET is easy to use and has the highest quality standards. It is possibility to increase economies of scales by usage in PFC and PWM topologies in the application. It reducing parasitic source inductance by Kelvin Source improves efficiency by faster switching and ease of use due to less ringing.

Total Pb free

RoHS compliant

Easy visual inspection leads

Improve thermal performance

Suitable for hard and soft switching

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