Infineon OptiMOSTM Type N-Channel Power MOSFET, 100 A, 30 V Enhancement, 8-Pin PG-TDSON-8

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Subtotal (1 pack of 5 units)*

Kr.28 60 

(exc. VAT)

Kr.35 75 

(inc. VAT)

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Last RS stock
  • Final 85 unit(s), ready to ship
Units
Per unit
Per Pack*
5 - 45Kr. 5,72Kr. 28,60
50 - 495Kr. 5,582Kr. 27,91
500 - 995Kr. 5,40Kr. 27,00
1000 - 2495Kr. 5,262Kr. 26,31
2500 +Kr. 5,17Kr. 25,85

*price indicative

RS Stock No.:
273-2814
Mfr. Part No.:
ISC011N03L5SATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

PG-TDSON-8

Series

OptiMOSTM

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

96W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

72nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC, IEC61249-2-21, RoHS

Automotive Standard

No

The Infineon MOSFET is a N channel MOSFET and optimized for high performance buck converter. This MOSFET is qualified according to JEDEC standard and halogen free according to IEC61249 2 21.

RoHS compliant

Pb free lead plating

Very low on resistance

Superior thermal resistance

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