Infineon IPP Type N-Channel MOSFET, 36.23 A, 700 V Enhancement, 3-Pin PG-TO220-3 IPP65R060CFD7XKSA1

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Subtotal (1 tube of 50 units)*

Kr.1 784 65 

(exc. VAT)

Kr.2 230 80 

(inc. VAT)

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Units
Per unit
Per Tube*
50 +Kr. 35,693Kr. 1 784,65

*price indicative

RS Stock No.:
273-3019
Mfr. Part No.:
IPP65R060CFD7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

36.23A

Maximum Drain Source Voltage Vds

700V

Series

IPP

Package Type

PG-TO220-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

68nC

Maximum Power Dissipation Pd

171W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC, RoHS

The Infineon 650V cool MOS CFD7 super junction MOSFET in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar and EV charging stations, in which it enables significant efficiency improvement

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

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