Infineon 800V CoolMOS P7 MOSFET, 4 A, 800 V, 3-Pin PG-TO251-3 IPU80R1K4P7AKMA1

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Subtotal (1 tube of 75 units)*

Kr.570 375 

(exc. VAT)

Kr.712 95 

(inc. VAT)

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  • 1 425 unit(s) ready to ship
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Units
Per unit
Per Tube*
75 - 75Kr. 7,605Kr. 570,38
150 +Kr. 6,039Kr. 452,93

*price indicative

RS Stock No.:
273-7470
Mfr. Part No.:
IPU80R1K4P7AKMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

800V

Package Type

PG-TO251-3

Series

800V CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

32W

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

10nC

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC for Industrial Applications, RoHS

Automotive Standard

No

The Infineon MOSFET has better production yield by reducing ESD related failures. This MOSFET has less production issues and reduced field returns and easy to select right parts for fine tuning of designs. It enabling higher power density designs, BOM savings and lower assembly costs.

Fully optimized portfolio

Best in class performance

Easy to drive and to parallel

Integrated zener diode ESD protection

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