Vishay SIRS Type P-Channel MOSFET, 198 A, 40 V Enhancement, 8-Pin SO-8 SIRS4401DP-T1-GE3
- RS Stock No.:
- 279-9967
- Mfr. Part No.:
- SIRS4401DP-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.90 72
(exc. VAT)
Kr.113 40
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 5 998 unit(s) shipping from 05. januar 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | Kr. 45,36 | Kr. 90,72 |
| 50 - 98 | Kr. 44,56 | Kr. 89,12 |
| 100 - 248 | Kr. 40,61 | Kr. 81,22 |
| 250 - 998 | Kr. 39,925 | Kr. 79,85 |
| 1000 + | Kr. 39,24 | Kr. 78,48 |
*price indicative
- RS Stock No.:
- 279-9967
- Mfr. Part No.:
- SIRS4401DP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 198A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SIRS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0022Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 132W | |
| Typical Gate Charge Qg @ Vgs | 588nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 198A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SIRS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0022Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 132W | ||
Typical Gate Charge Qg @ Vgs 588nC | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
New generation power MOSFET
100 percent Rg and UIS tested
Ultra low RDS x Qg FOM product
Fully lead (Pb)-free device
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