Vishay SQA Type P-Channel MOSFET, 9 A, 12 V Enhancement, 7-Pin SC-70W-6L SQA409CEJW-T1_GE3
- RS Stock No.:
- 280-0016
- Mfr. Part No.:
- SQA409CEJW-T1_GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
Kr. 5 808,00
(exc. VAT)
Kr. 7 260,00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | Kr. 1,936 | Kr. 5 808,00 |
*price indicative
- RS Stock No.:
- 280-0016
- Mfr. Part No.:
- SQA409CEJW-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | SQA | |
| Package Type | SC-70W-6L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.0288Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Power Dissipation Pd | 13.6W | |
| Forward Voltage Vf | -0.72V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 2.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series SQA | ||
Package Type SC-70W-6L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.0288Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Power Dissipation Pd 13.6W | ||
Forward Voltage Vf -0.72V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 2.05mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
AEC-Q101 qualified
Fully lead (Pb)-free device
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