Vishay IRFPG50 N-Channel Power MOSFET, 6.1 A, 1 kV Enhancement, 3-Pin TO-247AC IRFPG50PBF
- RS Stock No.:
- 541-1095
- Distrelec Article No.:
- 301-91-596
- Mfr. Part No.:
- IRFPG50PBF
- Brand:
- Vishay
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Kr. 74,70
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Kr. 93,38
(inc. VAT)
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|---|---|---|
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- RS Stock No.:
- 541-1095
- Distrelec Article No.:
- 301-91-596
- Mfr. Part No.:
- IRFPG50PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Series | IRFPG50 | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 190W | |
| Typical Gate Charge Qg @ Vgs | 190nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.87mm | |
| Width | 5.31mm | |
| Height | 20.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Series IRFPG50 | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 190W | ||
Typical Gate Charge Qg @ Vgs 190nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.87mm | ||
Width 5.31mm | ||
Height 20.7mm | ||
Automotive Standard No | ||
Vishay IRFPG50 Series Power MOSFET, 1000V Drain Source Voltage, 190W Power Dissipation - IRFPG50PBF
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power control in demanding industrial environments. It delivers high drain-to-source voltage capability and is intended for through-hole mounting in power assemblies where robust thermal and electrical performance across a wide ambient range is required.
Features and Benefits:
• 1000V rating enables high-voltage switching applications
• 6.1A continuous drain current supports moderate load currents
• 190W maximum dissipation allows sustained power handling
• 2Ω maximum Rds(on) simplifies gate drive and thermal design
• 190nC typical gate charge informs gate-drive energy budgeting
• 20V gate tolerance permits flexible gate drive margins
• 6.1A continuous drain current supports moderate load currents
• 190W maximum dissipation allows sustained power handling
• 2Ω maximum Rds(on) simplifies gate drive and thermal design
• 190nC typical gate charge informs gate-drive energy budgeting
• 20V gate tolerance permits flexible gate drive margins
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive front-ends
• Used for inverter and UPS switching stages
• Can be used for resistive load switching in test equipment
• Suitable for through-hole prototyping and repair scenarios
• Ideal for industrial motor drive front-ends
• Used for inverter and UPS switching stages
• Can be used for resistive load switching in test equipment
• Suitable for through-hole prototyping and repair scenarios
What package and mounting method does it use?
It is supplied in a TO-247AC package designed for through-hole mounting to allow reliable board and heatsink attachment.
What thermal range is it rated to operate within?
It is specified to operate from -55°C up to 150°C, permitting use in environments with wide temperature variation.
How many pins are present and how does that affect layout?
The device has three pins, allowing standard single-channel MOSFET PCB layouts and conventional gate, drain and source routing.
What is the device’s forward voltage and how does that impact switching losses?
The forward voltage is 1.8V which contributes to conduction and switching energy calculations when used in circuits with diode conduction or body-diode events.
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