DiodesZetex Type P-Channel MOSFET, 1.6 A, 30 V Enhancement, 3-Pin SOT-23 ZXMP3A13FTA
- RS Stock No.:
- 669-7518
- Mfr. Part No.:
- ZXMP3A13FTA
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.36 61
(exc. VAT)
Kr.45 76
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 10 unit(s) shipping from 29. desember 2025
- Plus 270 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 20 | Kr. 3,661 | Kr. 36,61 |
| 30 - 140 | Kr. 2,174 | Kr. 21,74 |
| 150 - 740 | Kr. 1,899 | Kr. 18,99 |
| 750 - 1490 | Kr. 1,602 | Kr. 16,02 |
| 1500 + | Kr. 1,327 | Kr. 13,27 |
*price indicative
- RS Stock No.:
- 669-7518
- Mfr. Part No.:
- ZXMP3A13FTA
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Maximum Power Dissipation Pd | 806mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.95V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Length | 3.05mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Maximum Power Dissipation Pd 806mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.95V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Length 3.05mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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