onsemi 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002
- RS Stock No.:
- 671-0312
- Distrelec Article No.:
- 304-08-906
- Mfr. Part No.:
- 2N7002
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.51 48
(exc. VAT)
Kr.64 36
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 180 unit(s) shipping from 09. februar 2026
- Plus 340 unit(s) shipping from 09. februar 2026
- Plus 5 440 unit(s) shipping from 06. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | Kr. 2,574 | Kr. 51,48 |
| 200 - 480 | Kr. 2,22 | Kr. 44,40 |
| 500 - 980 | Kr. 1,922 | Kr. 38,44 |
| 1000 - 1980 | Kr. 1,688 | Kr. 33,76 |
| 2000 + | Kr. 1,539 | Kr. 30,78 |
*price indicative
- RS Stock No.:
- 671-0312
- Distrelec Article No.:
- 304-08-906
- Mfr. Part No.:
- 2N7002
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 223nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Width | 1.3 mm | |
| Height | 0.93mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 223nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Width 1.3 mm | ||
Height 0.93mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
- COO (Country of Origin):
- CN
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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