onsemi FDS Type P-Channel MOSFET, 8.8 A, 30 V Enhancement, 8-Pin SOIC FDS4435BZ
- RS Stock No.:
- 671-0508
- Mfr. Part No.:
- FDS4435BZ
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.46 56
(exc. VAT)
Kr.58 20
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Supply shortage
- Plus 85 left, shipping from 19. januar 2026
- Plus 170 left, shipping from 19. januar 2026
- Plus 11 960 left, shipping from 26. januar 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 9,312 | Kr. 46,56 |
| 50 - 95 | Kr. 8,008 | Kr. 40,04 |
| 100 - 495 | Kr. 6,956 | Kr. 34,78 |
| 500 - 995 | Kr. 6,132 | Kr. 30,66 |
| 1000 + | Kr. 5,582 | Kr. 27,91 |
*price indicative
- RS Stock No.:
- 671-0508
- Mfr. Part No.:
- FDS4435BZ
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | FDS | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series FDS | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Length 5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi FDS Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi FDS Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC
- onsemi FDS Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC FDS4465
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SI4435DY
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC