onsemi PowerTrench N-Channel MOSFET, 8.5 A, 30 V Enhancement, 8-Pin SOIC FDS8884
- RS Stock No.:
- 671-0722
- Mfr. Part No.:
- FDS8884
- Brand:
- onsemi
Get a bulk buy discount
Add 100 more to save 13%
View bulk pricing optionsSubtotal (1 pack of 10 units)*
Kr. 48,73
(exc. VAT)
Kr. 60,91
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 2 700 unit(s) shipping from 16 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 90 | Kr. 4,873 | Kr. 48,73 | - |
| 100 - 240 | Kr. 4,198 | Kr. 41,98 | 13% |
| 250 - 490 | Kr. 3,638 | Kr. 36,38 | 25% |
| 500 - 990 | Kr. 3,203 | Kr. 32,03 | 34% |
| 1000 + | Kr. 2,929 | Kr. 29,29 | 39% |
*price indicative
- RS Stock No.:
- 671-0722
- Mfr. Part No.:
- FDS8884
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Width 4mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- DiodesZetex Isolated 2 Type P 8.5 A 8-Pin SOIC DMC3021LSD-13
- onsemi PowerTrench N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
