onsemi QFET Type N-Channel QFET MOSFET, 9.5 A, 200 V Enhancement, 3-Pin TO-220F

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Subtotal (1 pack of 5 units)*

Kr.67 27 

(exc. VAT)

Kr.84 09 

(inc. VAT)

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  • 245 unit(s) shipping from 02. januar 2026
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Per unit
Per Pack*
5 - 5Kr. 13,454Kr. 67,27
10 - 95Kr. 11,44Kr. 57,20
100 - 245Kr. 8,558Kr. 42,79
250 - 495Kr. 8,512Kr. 42,56
500 +Kr. 7,252Kr. 36,26

*price indicative

RS Stock No.:
671-5200
Mfr. Part No.:
FQPF10N20C
Brand:
onsemi
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Brand

onsemi

Product Type

QFET MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9.5A

Maximum Drain Source Voltage Vds

200V

Series

QFET

Package Type

TO-220F

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.36Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

20nC

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

72W

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

9.19mm

Width

4.7 mm

Length

10.16mm

Automotive Standard

No

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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