STMicroelectronics STripFET II Type N-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-252 STD25NF10LT4
- RS Stock No.:
- 687-5068
- Mfr. Part No.:
- STD25NF10LT4
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.107 62
(exc. VAT)
Kr.134 525
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 95 unit(s) ready to ship
- Plus 1 230 unit(s) shipping from 02. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | Kr. 21,524 | Kr. 107,62 |
| 10 - 20 | Kr. 18,252 | Kr. 91,26 |
| 25 - 95 | Kr. 17,606 | Kr. 88,03 |
| 100 - 495 | Kr. 14,056 | Kr. 70,28 |
| 500 + | Kr. 12,872 | Kr. 64,36 |
*price indicative
- RS Stock No.:
- 687-5068
- Mfr. Part No.:
- STD25NF10LT4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STripFET II | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.2 mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STripFET II | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 175°C | ||
Width 6.2 mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Automotive Standard No | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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