STMicroelectronics STripFET II N-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263 STB100NF04T4
- RS Stock No.:
- 687-5093
- Mfr. Part No.:
- STB100NF04T4
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
Kr. 61,96
(exc. VAT)
Kr. 77,44
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 14 unit(s) ready to ship
- Plus 1 612 unit(s) shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 30,98 | Kr. 61,96 |
| 20 - 98 | Kr. 29,96 | Kr. 59,92 |
| 100 - 198 | Kr. 29,03 | Kr. 58,06 |
| 200 + | Kr. 25,155 | Kr. 50,31 |
*price indicative
- RS Stock No.:
- 687-5093
- Mfr. Part No.:
- STB100NF04T4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | STripFET II | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 9.35mm | |
| Height | 4.6mm | |
| Length | 10.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series STripFET II | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 9.35mm | ||
Height 4.6mm | ||
Length 10.4mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
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- STMicroelectronics STripFET II Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 STP120NF10
- STMicroelectronics STripFET II Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263