Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 5 units)*

Kr.76 88 

(exc. VAT)

Kr.96 10 

(inc. VAT)

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5 - 45Kr. 15,376Kr. 76,88
50 - 120Kr. 14,162Kr. 70,81
125 - 245Kr. 13,224Kr. 66,12
250 - 495Kr. 12,31Kr. 61,55
500 +Kr. 11,372Kr. 56,86

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RS Stock No.:
688-6800
Mfr. Part No.:
IRF1018EPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

79A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

46nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.83 mm

Height

9.02mm

Standards/Approvals

No

Length

10.67mm

Distrelec Product Id

304-43-449

Automotive Standard

No

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