Infineon HEXFET Type N-Channel MOSFET, 350 A, 40 V Enhancement, 3-Pin TO-247 IRFP4004PBF

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Kr.74 59 

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Kr.93 24 

(inc. VAT)

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1 - 9Kr. 74,59
10 - 24Kr. 70,81
25 - 49Kr. 69,44
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100 +Kr. 60,52

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Packaging Options:
RS Stock No.:
688-6986
Distrelec Article No.:
302-84-051
Mfr. Part No.:
IRFP4004PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

350A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

380W

Typical Gate Charge Qg @ Vgs

220nC

Maximum Operating Temperature

175°C

Length

15.87mm

Height

20.7mm

Width

5.31 mm

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

30284051

N-Channel Power MOSFET 40V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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