DiodesZetex Isolated 2 Type P-Channel Power MOSFET, 4.8 A, 60 V Enhancement, 8-Pin SOIC ZXMP6A18DN8TA
- RS Stock No.:
- 708-2554
- Mfr. Part No.:
- ZXMP6A18DN8TA
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.44 70
(exc. VAT)
Kr.55 90
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 940 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 8,94 | Kr. 44,70 |
| 25 - 120 | Kr. 7,108 | Kr. 35,54 |
| 125 - 245 | Kr. 5,632 | Kr. 28,16 |
| 250 + | Kr. 5,436 | Kr. 27,18 |
*price indicative
- RS Stock No.:
- 708-2554
- Mfr. Part No.:
- ZXMP6A18DN8TA
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.85V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020 | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.85V | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020 | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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